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We report that a deionized water etching and thermal annealing technique canbe effective for preparing atomically-flat and singly-terminated surfaces ofsingle crystalline SrTiO3 substrates. After a two-step thermal-annealing anddeionized-water etching procedure, topography measured by atomic forcemicroscopy shows the evolution of substrates from a rough to step-terracedsurface structure. Lateral force microscopy confirms that the atomically-flatsurfaces are singly-terminated. Moreover, this technique can be used to removeexcessive strontium oxide or hydroxide composites segregated on the SrTiO3surface. This acid-etchant-free technique facilitates the preparation ofatomically-aligned SrTiO3 substrates, which promotes studies on two-dimensionalphysics of complex oxide interfaces.

Preparation of atomically-flat SrTiO3 surfaces using a deionized-water etching and thermal annealing procedure