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The purpose of the designed reactor is (i) to obtain polycrystalline and/or amorphous thin lms  by controlled deposition induced by a reactive sputtering magnetron and (ii) to perform a parallel  in situ structural study of the deposited thin lms by X-ray diffraction, in real time, during the whole  growth process. The designed reactor allows for the control and precise variation of the relevant processing parameters, namely, magnetron target-to-sample distance, dc magnetron voltage, and nature  of the gas mixture, gas pressure and temperature of the substrate. On the other hand, the chamber can be used in different X-ray diffraction scanning modes, namely, θ-2θ scanning, xed α-2θ  scanning, and also low angle techniques such as grazing incidence small angle X-ray scattering and  X-ray reectivity. The chamber was mounted on a standard four-circle diffractometer located in a  synchrotron beam line and rst used for a preliminary X-ray diffraction analysis of AlN thin lms  during their growth on the surface of a (100) silicon wafer. © 2013 American Institute of PhysicsFil: Burgi, Juan Mauel. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico - CONICET - Rosario. Instituto de Fisica de Rosario (i); ArgentinaFil: Newenschwander, R.. Laboratorio Nacional de Luz Sincrotron Campinas;Fil: Kellermann, G.. Universidade Federal Do Parana;Fil: García Molleja, Javier. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico - CONICET - Rosario. Instituto de Fisica de Rosario (i); ArgentinaFil: Craievich, A.. Instituto de Fisica Universidad de San Pablo;Fil: Feugeas J.. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico - CONICET - Rosario. Instituto de Fisica de Rosario (i); Argentin

Reactive sputter magnetron reactor for preparation of thin films and simultaneous in situ structural study by X-ray diffraction