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We demonstrate that, in a GaSb/GaAs epitaxial structure, a coherent longitudinal optical (LO) phonon in a GaAs buffer layer optically covered with a GaSb top layer is observed utilizing terahertz spectroscopy. It is confirmed from Raman scattering measurements that only the optical phonons in the GaSb layer is optically observable. In the terahertz-wave measurement, the Fourier power spectrum of a terahertz waveform exhibits both the coherent GaAs and GaSb LO phonon bands; namely, the coherent LO phonon in the optically covered GaAs buffer layer is observed in the terahertz-wave measurement. This fact demonstrates that the instantaneous surface potential modulation, which originates from the impulsive carrier excitation by the pump beam, reaches the GaAs buffer layer. Consequently, the above-mentioned surface potential modulation generates the coherent GaAs LO phonon that cannot be optically excited. In addition, we perform a time-partitioning Fourier transform analysis in order to investigate the decay d...

aip conference proceedings

Dynamical characteristics of a coherent longitudinal optical phonon in a GaAs buffer layer optically covered with a GaSb top epitaxial layer investigated with use of terahertz spectroscopy