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Three-dimensional (3-D) topological insulators (TI) are characterized by thepresence of metallic surface states and a bulk band gap. Recently theoreticaland experimental studies have shown an induced gap in the surface state bandsof TI thin films. The gap results from interaction of conduction band (CB) andvalence band (VB) surface states from the opposite surfaces of a thin film, andits size is determined by the film thickness. This gap formation could open thepossibility of thin-film TI-based metal-oxide-semiconductor field-effecttransistors (MOSFETs). Here we explore the performance of MOSFETs based on TIthin films, specifically Bi2Se3, using quantum ballistic transport simulationswith the tight-binding Hamiltonian in the atomic orbital basis. Our simulationsindicate that Bi2Se3 MOSFET will be vulnerable to short-channel effects due tothe high relative dielectric constant of Bi2Se3(~100)despite its expectedexcellent electrostatic integrity inherent in a two-dimensional system, andwill have other limitations as compared to silicon-based MOSFETs. However,Bi2Se3 MOSFETs, and presumably other TI-based MOSFETs, appear to providereasonable performance that perhaps could provide novel device opportunitieswhen combined with novel TI properties such as spin-polarized surface states.

Topological insulator Bi2Se3 thin films as an alternative channel material in MOSFETs