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We developed a method for determining of the deep donor-like interface state density distribution Dit(E) at the insulator/wide bandgap semiconductor interface in metal/insulator/semiconductor structures from the measurements of photocapacitance vs. ultraviolet light intensity CL(Φ). From the comparison of theoretical and experimental CL(Φ) curves we obtained the continuous donor Dit(E) in the energy range between 0.15 eV and 1 eV from the valence band top for a metal/Al2O3/n-GaN device. In addition, the acceptor-like interface state Dit(E) in the upper part of the bandgap was determined from the capacitance-voltage method.

applied physics letters

Determination of the deep donor-like interface state density distribution in metal/Al2O3/n-GaN structures from the photocapacitance–light intensity measurement