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We show that the performance of pentacene transistors can be significantlyimproved by maximizing the interfacial area at single walled carbon nanotube(SWCNT)/pentacene. The interfacial areas are varied by anchoring short SWCNTsof different densities (0-30/{\mu}m) to the Pd electrodes. The average mobilityis increased three, six and nine times for low, medium and high SWCNTdensities, respectively, compared to the devices with zero SWCNT. The currenton-off ratio and on-current are increased up to 40 times and 20 times withincreasing the SWCNT density. We explain the improved device performance usingreduced barrier height of SWCNT/pentacene interface.

The Effect of Carbon Nanotube/Organic Semiconductor Interfacial Area on the Performance of Organic Transistors