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We report the optical perturbation of atomic arrangement in the layeredGeTe/Sb_{2}Te_{3} phase change memory material. To observe the structuralchange, the coherent A_{1} mode of GeTe_{4} local structure is investigated atvarious polarization angles of femtosecond pump pulses with the fluence at < 78\mu J/cm^{2}. p-polarization found to be more effective in inducing the A_{1}frequency shift that can be either reversible or irreversible, depending on thepump fluence. The predominant origin of this shift is attributed torearrangement of Ge atoms driven by anisotropic dissociation of the Ge-Te bondsalong the [111] axis after the p-polarized pulse irradiation.

Polarization Dependent Optical Control of Atomic Arrangement in Multilayer Ge-Sb-Te Phase Change Materials