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We have conducted a detailed thin film growth structure of oxygen engineeredmonoclinic HfO$_{2\pm x}$ grown by reactive molecular beam epitaxy (MBE). Theoxidation conditions induce a switching between ($\bar{1}11$) and (002) textureof hafnium oxide. The band gap of oxygen deficient hafnia decreases withincreasing amount of oxygen vacancies by more than 1 eV. For high oxygenvacancy concentrations, defect bands form inside the band gap that induceoptical transitions and $p$-type conductivity. The resistivity changes byseveral orders of magnitude as a function of oxidation conditions. Oxygenvacancies do not give rise to ferromagnetic behavior.

Physical properties and band structure of reactive molecular beam epitaxy grown oxygen engineered HfO$_{2\pm x}$