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The local conductivity in the channel of a thin-film field-effect transistoris proportional to the charge density induced by the local gate voltage. Weshow how this determines the frequency- and position-dependence of the chargeinduced in the channel for the case of "zero applied current": zerodrain-source voltage with charge induced by a square-wave voltage applied tothe gate, assuming constant mobility and negligible contact impedances. Anapproximate expression for the frequency dependence of the induced charge inthe center of the channel can be conveniently used to determine the chargemobility. Fits of electro-optic measurements of the induced charge in organictransistors are used as examples.

Dynamics of Charge Flow in the Channel of a Thin-Film Field-Effect Transistor