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The influence of gate voltage, temperature and magnetic field on domain wall(DW) creep dynamics is investigated in Pt/Co/GdOx films with perpendicularmagnetic anisotropy and imaged by a scanning magneto-optical Kerr effecttechnique. The DW creep velocity can be controlled by an electric field appliedto the Co/GdOx interface via a linear modulation of the activation energybarrier with gate voltage. At low speeds, the DW velocity can be changedsignificantly by a gate voltage, but the effect is diminished as the DWvelocity increases, which limits electric field control of fast DW motion.

Voltage-Gated Modulation of Domain Wall Velocity in an Ultrathin Metallic Ferromagnet