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We report on the dielectric degradation of Rare-Earth Oxides (REOs), whenused as interfacial buffer layers together with HfO2 high-k films (REOs/HfO2)on high mobility Ge substrates. Metal-Oxide-Semiconductor (MOS) devices withthese stacks,show dissimilar charge trapping phenomena under varying levels ofConstant- Voltage-Stress (CVS) conditions, which also influences the measureddensities of the interface (Nit) and border (NBT) traps. In the present studywe also report on C-Vg hysteresis curves related to Nit and NBT. We alsopropose a new model based on Maxwell-Wagner instabilities mechanism thatexplains the dielectric degradations (current decay transient behavior) of thegate stack devices grown on high mobility substrates under CVS bias from low tohigher fields, and which is unlike to those used for other MOS devices.Finally, the time dependent degradation of the corresponding devices revealedan initial current decay due to relaxation, followed by charge trapping andgeneration of stress-induced leakage which eventually lead to hard breakdownafter long CVS stressing.

Gate Stack Dielectric Degradation of Rare-Earth Oxides Grown on High Mobility Ge Substrates