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The electron and hole effective masses of kesterite (KS) and stannite (ST)structured Cu_2Zn-IV-VI_4 (IV = Sn, Ge, Si and VI = S, Se) semiconductors aresystematically studied using first-principles calculations. We find that theelectron effective masses are almost isotropic, while strong anisotropy isobserved for the hole effective mass. The electron effective masses aretypically much smaller than the hole effective masses for all studiedcompounds. The ordering of the topmost three valence bands and thecorresponding hole effective masses of the KS and ST structures are differentdue to the different sign of the crystal-field splitting. The electron and holeeffective masses of Se-based compounds are significantly smaller compared tothe corresponding S-based compounds. They also decrease as the atomic number ofthe group IV elements (Si, Ge, Sn) increases, but the decrease is less notablethan that caused by the substitution of S by Se.

First-principles study on the effective masses of zinc-blend-derived Cu_2Zn-IV-VI_4 (IV = Sn, Ge, Si and VI = S, Se)