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We have measured T1 spin lifetimes of a 14 nm modulation-doped (100) GaAsquantum well using a time-resolved pump-probe Kerr rotation technique. Thequantum well was selected by tuning the wavelength of the probe laser. T1lifetimes in excess of 1 microsecond were measured at 1.5 K and 5.5 T,exceeding the typical T2* lifetimes that have been measured in GaAs and II-VIquantum wells by orders of magnitude. We observed effects from nuclearpolarization, which were largely removable by simultaneous nuclear magneticresonance, along with two distinct lifetimes under some conditions that likelyresult from probing two differently-localized subsets of electrons.

Long-lived electron spins in a modulation doped (100) GaAs quantum well