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An investigation was carried out into the effect of spin drift on spinaccumulation signals in highly-doped Si using non-local 4-terminal (NL-4T) and3-terminal (NL-3T) methods. The spin signals in the NL-4T scheme were notaffected by spin drift, and the bias dependence was governed by whether spinswere injected into or extracted from the Si channel. In contrast, the spinsignal was strongly modulated by the bias electric field in the NL-3T scheme.The bias electric field dependence of the spin signals in the NL-3T method wasquantitatively clarified using the spin drift-diffusion equation, and theresults can be reasonably explained.

The effect of spin drift on spin accumulation voltages in highly-doped Si