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The valence band offset, ΔE_[V], at an Al2O3/In0.17Al0.83N interface formed by atomic layer deposition was measured by x-ray photoelectron spectroscopy. The conventional method of using the core level separation, ΔE_[CL], between O 1s and In 4d resulted in ΔE_[V] = 1.3 eV, which was apparently consistent with the direct observation of the valence band edge varying the photoelectron exit angle, θ. However, ΔE_[CL] and full width at half maximum of core-level spectra were dependent on θ, which indicated significant potential gradients in Al2O3 and InAlN layers. An actual ΔE_[V] of 1.2 eV was obtained considering the potential gradients

Valence band offset at Al2O3/In0.17Al0.83N interface formed by atomic layer deposition