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Epitaxial growth of Co20Fe50Ge30 thin film on single crystal MgO (001)substrate is reported. Structure characterization revealed (001)-oriented B2order of CoFeGe well lattice matched with the MgO barrier. Perpendicularmagnetic anisotropy (PMA) was achieved in the MgO/CoFeGe/MgO structure with anoptimized magnetic anisotropy energy density (K) of 3 106 erg/cm3. The magneticanisotropy is found to depend strongly on the thickness of the MgO and CoFeGelayers, indicating that the PMA of CoFeGe is contributed by the interfacialanisotropy between CoFeGe and MgO. With reported low damping constant, CoFeGefilms are promising spintronic materials for achieving low switching current.

Perpendicular magnetization of Co20Fe50Ge30 films induced by MgO interface