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We report a giant spin Hall effect (SHE) in {\beta}-W thin films. Using spintorque induced ferromagnetic resonance with a {\beta}-W/CoFeB bilayermicrostrip we determine the spin Hall angle to be |\theta|=0.30\pm0.02, largeenough for an in-plane current to efficiently reverse the orientation of anin-plane magnetized CoFeB free layer of a nanoscale magnetic tunnel junctionadjacent to a thin {\beta}-W layer. From switching data obtained with such3-terminal devices we independently determine |\theta|=0.33\pm0.06. We alsoreport variation of the spin Hall switching efficiency with W layers ofdifferent resistivities and hence of variable ({\alpha} and {\beta}) phasecomposition.

Spin transfer torque devices utilizing the giant spin Hall effect of tungsten