English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Hydrogen incorporation in diluted nitride semiconductors dramaticallymodifies the electronic and structural properties of the crystal through thecreation of nitrogen-hydrogen complexes. We report a convergent beamelectron-diffraction characterization of diluted nitridesemiconductor-heterostructures patterned at a sub-micron scale and selectivelyexposed to hydrogen. We present a method to determine separately perpendicularmismatch and static disorder in pristine and hydrogenated heterostructures. Theroles of chemical composition and strain on static disorder have beenseparately assessed.

applied physics letters

Convergent beam electron-diffraction investigation of lattice mismatch  and static disorder in GaAs/GaAs1-xNx intercalated GaAs/GaAs1-xNx:H  heterostructures