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The electron spin relaxation in $n$-type and intrinsic GaAs$_{1-x}$Bi$_x$with Bi composition $0\le x \le 0.1$ is investigated from the microscopickinetic spin Bloch equation approach. The incorporation of Bi is shown tomarkedly decrease the spin relaxation time as a consequence of the modificationof the spin-orbit interaction. We demonstrate that the density and temperaturedependences of spin relaxation time in GaAs$_{1-x}$Bi$_x$ resemble the ones inGaAs. Meanwhile, the Bir-Aronov-Pikus mechanism is found to be negligiblecompared to the D'yakonov-Perel' mechanism in intrinsic sample. Due to theabsence of direct measurement of the electron effective mass in the wholecompositional range under investigation, we further explore the effect of apossible variation of electron effective mass on the electron spin relaxation.

Electron spin relaxation in GaAs$_{1-x}$Bi$_x$: Effects of spin-orbit tuning by Bi incorporation