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4 páginas, 2 figuras.-- et al.The μm-scale spatial distribution of the elements of polycrystalline Cu(In 1-xGa x)Se 2 absorber surfaces is examined using x-ray photoelectron emission microscopy. The chemical composition varies from grain to grain, and a direct, linear anticorrelation between the In 3d and Ga 2p photoemission line intensities is observed. The line intensities are interpreted in terms of a varying value of x = Ga/(In Ga); the band gaps calculated from the inferred compositions of the grains are shown to be normally distributed with a standard deviation of 40 meV. © 2012 American Institute of Physics.R.G.W., R.F., and M.B. are grateful to the Helmholtz-Association for financial support (VH-NG-423). R.F. thanks the German Academic Exchange Agency (DAAD; 331 4 04 002).Peer Reviewe

Intergrain variations of the chemical and electronic surface structure of polycrystalline Cu(In,Ga)Se2 thin-film solar cell absorbers