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Bi2Te3 based thermoelectric devices typically use a nickel layer as adiffusion barrier to block the diffusion of solder or copper atoms from theelectrode into the thermoelectric material. Previous studies have showndegradation in the efficiency of these thermoelectric devices may be due to thediffusion of the barrier layer into the thermoelectric material. In this workNi, Co, Fe, and Mn are intentionally doped into Cu0.01Bi2Te2.7Se0.3 in order tounderstand their effects on the thermoelectric material. Thermoelectrictransport properties including the Seebeck coefficient, thermal conductivity,electrical resistivity, carrier concentration, and carrier mobility ofCu0.01Bi2Te2.7Se0.3 doped with 2 atomic percent M (M=Ni, Co, Fe, Mn) asCu0.01Bi2Te2.7Se0.3M0.02, are studied in a temperature range of 5-525 K.

Transport Properties of Ni, Co, Fe, Mn Doped Cu0.01Bi2Te2.7Se0.3 for Thermoelectric Device Applications