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We have investigated the quantum beat of the type-I heavy-hole (HH) and the type-II light-hole (LH) excitons in an In0.15Ga0.85As/GaAs strained single quantum well (SQW) using a reflection-type pump-probe technique. The type-II LH exciton consists of the electron and LH located in the In0.15Ga0.85As and GaAs layers, respectively. The energies of the type-I and the type-II excitons were evaluated with photoreflectance spectroscopy. The exciton states were calculated based on a variational method. The time-domain signals clearly show the oscillatory structure with the period corresponding to the splitting energy of the HH and the LH excitons. From the pump-energy dependence of the Fourier transform spectrum and intensity, it is concluded that the oscillation originates from the quantum beat of the type-I HH and the type-II LH excitons.

Quantum beats of type-I and type-II excitons in an InxGa1−xAs/GaAs strained single quantum well