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The band bending in a Mg-doped, p-type GaN film grown by hydride vapor phase epitaxy was studied at various temperatures. At 295 K, the band bending in dark was calculated to be approximately −1.5 eV. However, when the sample was heated to 600 K for 1 h in dark before performing a measurement at 295 K, the calculated value of band bending in dark became about −2.0 eV. These results are explained by the fact that increasing the sample temperature exponentially increases the rate at which the band bending restores and allows for a more accurate value of band bending to be measured.

Temperature-dependent Kelvin probe measurements of band bending in p-type GaN