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Two-dimensional materials are considered for future quantum devices and areusually produced by extensive methods like molecular beam epitaxy. We report onthe fabrication of field-effect transistors using individual ultra-thin leadsulfide nanostructures with lateral dimensions in the micrometer range and aheight of a few nanometers as conductive channel produced by a comparativelyfast, inexpensive, and scalable colloidal chemistry approach. Contacted withgold electrodes, such devices exhibit p-type behavior and temperature-dependentphotoconductivity. Trap states play a crucial role in the conduction mechanism.The performance of the transistors is among the ones of the best devices basedon colloidal nanostructures.

Field-effect transistors made of individual colloidal PbS nanosheets