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Schottky diodes on n-type 4H-SiC epitaxial layers have been fabricated for low-energy x-ray detection. The detectors were highly sensitive to soft x-rays and showed improved response compared to the commercial SiC UV photodiodes. Current-voltage characteristics at 475 K showed low leakage current revealing the possibility of high temperature operation. The high quality of the epi-layer was confirmed by x-ray diffraction and chemical etching. Thermally stimulated current measurements performed at 94–550 K revealed low density of deep levels which may cause charge trapping. No charge trapping on detectors’ responsivity in the low x-ray energy was found.

Highly sensitive x-ray detectors in the low-energy range on n-type 4H-SiC epitaxial layers