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We report on the ambipolar operation of back-gated thin film field-effect transistors based on hybrid n-type-SiC/p-type-single-walled carbon nanotube networks made with a simple drop casting process. High-performances such an on/off ratio of 105, on-conductance of 20 μS, and a subthreshold swing of less than 165 mV/decades were obtained. The devices are air-stable and maintained their ambipolar operation characteristics in ambient atmosphere for more than two months. Finally, these hybrid transistors were utilized to demonstrate advanced logic NOR-gates. This could be a fundamental step toward realizing stable operating nanoelectronic devices.

Ambipolar operation of hybrid SiC-carbon nanotube based thin film transistors for logic circuits applications