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We study the effect of strain on magnetic tunnel junctions (MTJ) induced by adiamond like carbon (DLC) film. The junction resistance as well as the tunnelmagnetoresistance (TMR) reduces with the DLC film. Non-equilibrium Green'sfunction quantum transport calculations show that the application of biaxialstrain increases the conductance for both the parallel and anti-parallelconfigurations. However, the conductance for the minority channel and for theanti-parallel configuration is significantly more sensitive to strain, whichdrastically increases transmission through a MgO tunnel barrier, therefore, theTMR ratio decreases with biaxial strain.

Biaxial strain effect of spin dependent tunneling in MgO magnetic tunnel junctions