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The structural, morphological, defect properties, and OFF state leakage current mechanism of mixed As-Sb type-II staggered gap GaAs-like and InAs-like interface heterostructure tunnel field effect transistors (TFETs) grown on InP substrates using linearly graded InxAl1-xAs buffer by molecular beam epitaxy are investigated and compared. Symmetric relaxation of >90% and >75% in the two orthogonal 〈110〉 directions with minimal lattice tilt was observed for the terminal GaAs0.35Sb0.65 and In0.7Ga0.3As active layers of GaAs-like and InAs-like interface TFET structures, respectively, indicating that nearly equal numbers of α and β dislocations were formed during the relaxation process. Atomic force microscopy reveals extremely ordered crosshatch morphology and low root mean square roughness of ∼3.17 nm for the InAs-like interface TFET structure compared to the GaAs-like interface TFET structure of ∼4.46 nm at the same degree of lattice mismatch with respect to the InP substrates. The GaAs-like interface exhibit...

journal of applied physics

Role of InAs and GaAs terminated heterointerfaces at source/channel on the mixed As-Sb staggered gap tunnel field effect transistor structures grown by molecular beam epitaxy