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We report the realization of field-effect transistors (FETs) made withchemically- synthesized layered two dimensional (2D) crystal semiconductor WS2.The 2D Schottky-barrier FETs demonstrate ambipolar behavior and a high (~105x)on/off current ratio at room temperature with current saturation. The behavioris attributed to the presence of an energy bandgap in the 2D crystal material.The FETs show clear photo response to visible light. The promising electronicand optical characteristics of the devices combined with the layered 2D crystalflexibility make WS2 attractive for future electronic and optical devices.

Transistors with Chemically Synthesized Layered Semiconductor WS2 Exhibiting 105 Room Temperature Modulation and Ambipolar Behavior