English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Tools annual

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Presents the access of premium content as premium feature

Premium Content

Global: Zendy Plus annual

Global: Zendy Free Plan

In this letter we report on transport measurements of epitaxial graphene onSiC(0001) with oxygen adsorption. In a $50\times 50 \mu\mathrm{m^2}$ size Hallbar we observe the half-integer quantum Hall effect with a transverseresistance plateau quantized at filling factor around $\nu = 2$, an evidence ofmonolayer graphene. We find low electron concentration of $9\times 10^{11}\textrm{cm}^{-2}$ and we show that a doping of $10^{13}\textrm{cm}^{-2}$ whichis characteristic of intrinsic epitaxial graphene can be restored by vacuumannealing. The effect of oxygen adsorption on carrier density is confirmed bylocal angle-resolved photoemission spectroscopy measurements. These results areimportant for understanding oxygen adsorption on epitaxial graphene and for itsapplication to metrology and mesoscopic physics where a low carrierconcentration is required.

Observation of the quantum Hall effect in epitaxial graphene on SiC(0001) with oxygen adsorption