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We have realized a two-dimensional hole system (2DHS), in which the 2DHS isinduced at an atomically flat hydrogen-terminated Si(111) surface by a negativegate voltage applied across a vacuum cavity. Hole densities up to$7.5\times10^{11}$ cm$^{-2}$ are obtained, and the peak hole mobility is about$10^4$ cm$^2$/Vs at 70 mK. The quantum Hall effect is observed. Shubnikov-deHaas oscillations show a beating pattern due to the spin-orbit effects, and theinferred zero-field spin splitting can be tuned by the gate voltage.

High mobility two-dimensional hole system on hydrogen-terminated silicon (111) surfaces