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Stepped GaN(0001) surface is studied by the kinetic Monte Carlo method andcompared with the model based on Burton-Carbera-Frank equations. Successivestages of surface pattern evolution during high temperature sublimation processare discussed. At low sublimation rates clear, well defined step bunches form.The process happens in the absence or for very low Schwoebel barriers at theideal surface. Bunches of several steps are well separated, move slowly and arerather stiff. Character of the process changes for more rapid sublimationprocess where double step formations become dominant and together with meandersand local bunches assemble into the less ordered surface pattern. Solution ofthe analytic equations written for one dimensional system confirms that stepbunching is induced by the particle advection caused by step-flow anisotropy.This anisotropy becomes important when due to the low Schwoebel barrier bothsides of step are symmetric. Simulations show that in the opposite limit ofvery high Schwoebel barrier steps fracture and rough surface builds up.

Step bunching process induced by the flow of steps at the sublimated crystal surface