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We demonstrate on the basis of first-principles calculations that theformation of carbonate-like moiety in SiO$_2$ could be the intrinsic origin ofnegative fixed charge in SiC thermal oxidation. We find that two possibleorigins for the negative fixed charges are O-lone-pair state and a negativelycharged CO$_3$ ion in SiO$_2$. Such CO$_3$ ion is able to be formed as a resultof the existence of residual C atoms in SiO$_2$, which are expected to beemitted from the interface between SiC and SiO$_2$, and the incorporation of Hatoms during wet oxidation.

Intrinsic Origin of Negative Fixed Charge in Wet Oxidation for Silicon Carbide