English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Graphene nanoribbon (GNR) field-effect transistors (FETs) with widths down to12 nm have been fabricated by electron beam lithography using a wafer-scalechemical vapor deposition (CVD) process to form the graphene. The GNR FETs showdrain-current modulation of approximately 10 at 300 K, increasing to nearly 106at 4 K. The strong temperature dependence of the minimum current indicates theopening of a bandgap for CVD-grown GNR-FETs. The extracted bandgap is estimatedto be around 0.1 eV by differential conductance methods. This work highlightsthe development of CVD-grown large-area graphene and demonstrates the openingof a bandgap in nanoribbon transistors.

applied physics letters

Transport Properties of Graphene Nanoribbon Transistors on Transport  Properties of Graphene Nanoribbon Transistors on Chemical-Vapor-Deposition  Grown Wafer-Scale Graphene