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We report on a large improvement in the wetting of Al2O3 thin films grown byun-seeded atomic layer deposition on monolayer graphene, without creating pointdefects. This enhanced wetting is achieved by greatly increasing the nucleationdensity through the use of polar traps induced on the graphene surface by anunderlying metallic substrate. The resulting Al2O3/graphene stack is thentransferred to SiO2 by standard methods.

Substrate-assisted nucleation of ultra-thin dielectric layers on graphene by atomic layer deposition