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High-stress silicon nitride nanostrings are a promising system for sensingapplications because of their ultra-high mechanical quality factors (Qs). Byperforming thermomechanical calibration across multiple vibrational modes, weare able to assess the roles of the various dissipation mechanisms in thesedevices. Specifically, we possess a set of nanostrings in which all measuredmodes fall upon a single curve of peak displacement versus frequency. Thisallows us to rule out bulk bending and intrinsic loss mechanisms as dominantsources of dissipation and to conclude that the most significant contributionto dissipation in high-stress nanostrings occurs at the anchor points.

Dissipation Mechanisms in Thermomechanically Driven Silicon Nitride Nanostrings