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We have performed continuous wave and pulsed electron spin resonancemeasurements of implanted bismuth donors in isotopically enriched silicon-28.Donors are electrically activated via thermal annealing with minimal diffusion.Damage from bismuth ion implantation is repaired during thermal annealing asevidenced by narrow spin resonance linewidths (B_pp=12uT and long spincoherence times T_2=0.7ms, at temperature T=8K). The results qualify ionimplanted bismuth as a promising candidate for spin qubit integration insilicon.

Electrical activation and electron spin resonance measurements of implanted bismuth in isotopically enriched silicon-28