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We show that quantum resistance standards made of transferred graphene reachthe uncertainty of semiconductor devices, the current reference system inmetrology. A large graphene device (150 \times 30 \mum2), exfoliated andtransferred onto GaAs, revealed a quantization with a precision of (-5.1 \pm6.3) \times 10-9 accompanied by a vanishing longitudinal resistance at currentlevels exceeding 10 \muA. While such performance had previously only beenachieved with epitaxially grown graphene, our experiments demonstrate thattransfer steps, inevitable for exfoliated graphene or graphene grown bychemical vapor deposition (CVD), are compatible with the requirements of highquality quantum resistance standards.

Precision quantization of Hall resistance in transferred graphene