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We present a few electron double quantum dot (QD) device defined in anisotopically purified $^{28}$Si quantum well (QW). An electron mobility of $5.5\cdot 10^4 cm^2(Vs)^{-1}$ is observed in the QW which is the highest mobilityever reported for a 2D electron system in $^{28}$Si. The residual concentrationof $^{29}$Si nuclei in the $^{28}$Si QW is lower than $10^{3} ppm$, at theverge where the hyperfine interaction is theoretically no longer expected todominantly limit the $T_{2}$ spin dephasing time. We also demonstrate acomplete suppression of hysteretic gate behavior and charge noise using anegatively biased global top gate.

Few electron double quantum dot in an isotopically purified $^{28}$Si quantum well