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We fabricated ferroelectric Bi4Ti3O12 (BiT) single crystalline thin filmssite-specifically substituted with LaTMO3 (TM = Al, Ti, V, Cr, Mn, Co, and Ni)on SrTiO3 substrates by pulsed laser epitaxy. When transition metals areincorporated into a certain site of the BiT, some of BiT-LaTMO3 showed asubstantially decreased band gap, coming from the additional optical transitionbetween oxygen 2p and TM 3d states. Specifically, all alloys with Mottinsulators revealed a possibility of band gap reduction. Among them, BiT-LaCoO3showed the largest band gap reduction by ~1 eV, positioning itself as apromising material for highly efficient opto-electronic devices.

Band gap tuning in ferroelectric Bi4Ti3O12 by alloying LaTMO3 (TM = Ti, V, Cr, Mn, Co, Ni, and Al)