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We use Raman scattering to investigate the composition behavior of the E 2h and A 1(LO) phonons of In xGa 1-xN and to evaluate the role of lateral compositional fluctuations and in-depth strain/composition gradients on the frequency of the A 1(LO) bands. For this purpose, we have performed visible and ultraviolet Raman measurements on a set of high-quality epilayers grown by molecular beam epitaxy with In contents over a wide composition range (0.25 < x < 0.75). While the as-measured A 1(LO) frequency values strongly deviate from the linear dispersion predicted by the modified random-element isodisplacement (MREI) model, we show that the strain-corrected A 1(LO) frequencies are qualitatively in good agreement with the expected linear dependence. In contrast, we find that the strain-corrected E 2h frequencies exhibit a bowing in relation to the linear behavior predicted by the MREI model. Such bowing should be taken into account to evaluate the composition or the strain state of InGaN material from the E 2h peak frequencies. We show that in-depth strain/composition gradients and selective resonance excitation effects have a strong impact on the frequency of the A 1(LO) mode, making very difficult the use of this mode to evaluate the strain state or the composition of InGaN material. © 2012 American Institute of Physics.Work supported by the Spanish Ministry of Science and Innovation (MICINN) through Project MAT2010-16116.Peer Reviewe

journal of applied physics

Raman scattering by the E2h and A1(LO) phonons of InxGa1−xN epilayers (0.25 &amp;lt; x &amp;lt; 0.75) grown by molecular beam epitaxy