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We report scanning tunneling microscopy (STM) and spectroscopy (STS) oftwisted graphene bilayer on SiC substrate. For twist angle ~ 4.5o the Diracpoint ED is located about 0.40 eV below the Fermi level EF due to the electrondoping at the graphene/SiC interface. We observed an unexpected result that thelocal Dirac point around a nanoscaled defect shifts towards the Fermi energyduring the STS measurements (with a time scale about 100 seconds). Thisbehavior was attributed to the decoupling between the twisted graphene and thesubstrate during the measurements, which lowers the carrier density of graphenesimultaneously.

Single-layer behavior and slow carrier density dynamic of twisted graphene bilayer