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Resistance switching effects in metal/perovskite contacts based on epitaxialc-axis oriented Y-Ba-Cu-O (YBCO) thin films with different crystallographicorientations have been studied. Three types of Ag/YBCO junctions with thecontact restricted to (i) c-axis direction, (ii) ab-plane direction, and (iii)both were designed and fabricated, and their current-voltage characteristicshave been measured. The type (i) junctions exhibited conventional bipolarresistance switching behavior, whereas in other two types the low-resistancestate was unsteady and their resistance quickly relaxed to the initialhigh-resistance state. Physical mechanism based on the oxygen diffusionscenario, explaining such behavior, is discussed.

Effect of crystallographic anisotropy on the resistance switching phenomenon in perovskites