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The spin accumulation in an n-GaAs channel produced by spin extraction into a(Ga,Mn)As contact is measured by cross-sectional imaging of the spinpolarization in GaAs. The spin polarization is observed in a 1 \mum thickn-GaAs channel with the maximum polarization near the contact edge opposite tothe maximum current density. The one-dimensional model of electron drift andspin diffusion frequently used cannot explain this observation. It also leadsto incorrect spin lifetimes from Hanle curves with a strong bias and distancedependence. Numerical simulations based on a two-dimensional drift-diffusionmodel, however, reproduce the observed spin distribution quite well and lead torealistic spin lifetimes.

Nonuniform current density and spin accumulation in a 1 {\mu}m thick n-GaAs channel