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Band structures and optical matrix elements of strained multiplequantum-wires (QWR's) are investigated theoretically via the effectivebond-orbital model, which takes into account the effects of valence-bandanisotropy and the band mixing. In particular, the Ga$_{1-x}$In$_x$As QWR'sgrown by strain-induced lateral ordering (SILO) are considered. Recently, longwavelength Ga$_{1-x}$In$_x$As QWR lasers have been fabricated via a single stepmolecular beam epitaxy technique which uses the SILO process.[1] Low thresholdcurrent and high optical anisotropy have been achieved. Multi-axial strains[combinations of biaxial strains in the (001) and (110) planes] for QWR's areconsidered, Our calculated anisotropy in optical matrix elements (for lightpolarized parallel versus perpendicular to the QWR's axis) is in good agreementwith experiment. We also find that the strain tends to increase the quantumconfinement and enhance the anisotropy of the optical transitions.Comment: 11 papges, 10 figure

Band structures and optical properties of Ga1−xInxAs quantum wires grown by strain-induced lateral ordering