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We have fabricated and examined several Al single electron transistors whosesmall islands were positioned on top of a counter electrode and hence did notcome into contact with a dielectric substrate. The equivalent charge noisefigure of all transistors turned out to be surprisingly low, (2.5 - 7)*10E-5e/sqrt(Hz) at f = 10 Hz. Although the lowest detected noise originates mostlyfrom fluctuations of background charge, the noise contribution of the tunneljunction conductances was, on occasion, found to be dominant.Comment: 4 pages of text with 1 table and 5 figure

Noise in Al single electron transistors of stacked design