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Using an advanced tight-binding approach, we estimate the anisotropy of thetunnel transmission associated with the rotation of the 5/2 spin of a single Mnatom forming an acceptor state in GaAs and located near an AlGaAs tunnelbarrier. Significant anisotropies in both in-plane and out-of-plane geometriesare found, resulting from the combination of the large spin-orbit couplingassociated with the p-d exchange interaction, cubic anisotropy of heavy-holedispersion and the low C2v symmetry of the chemical bonds.

Anisotropic magneto-resistance in a GaMnAs-based single impurity tunnel diode: a tight binding approach