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Single crystals of CaZn2Sb2, EuZn2Sb2, and YbZn2Sb2 were grown from melts ofnominal composition AZn5Sb5 (A=Ca,Eu,Yb) with the excess melt being removed at1073\,K. The electrical transport properties are consistent with thosepreviously reported for polycrystalline samples. This confirms that the$p$-type carrier concentrations ranging from 2x10^{19}cm^{-3} to~1x10^{20}cm^{-3} are intrinsic to these materials. Also consistent withtransport in polycrystalline materials, the carrier mobility is found to belowest in CaZn2Sb2, suggesting the trends in mobility and thermoelectricefficiency within these compounds are inherent to the material systems and notdue to inhomogeneity or impurities in polycrystalline samples. These resultssuggest CaZn2Sb2 has the strongest coupling between the doping/defects and theelectronic framework. Magnetization measurements reveal an antiferromagnetictransition near 13\,K in EuZn2Sb2, and the observed magnetic anisotropyindicates the spins align parallel and anti-parallel to $c$ in the trigonallattice. Powder neutron diffraction on polycrystalline samples of CaZn2Sb2 andYbZn2Sb2 reveals smooth lattice expansion to 1000\,K, with $c$ expanding fasterthan $a$. The Debye temperatures calculated from specific heat capacity dataand the isotropic displacement parameters are found to correlate with thecarrier mobility, with the CaZn2Sb2 displaying the largest Debye temperatureand smallest mobility.

Properties of single crystalline AZn2Sb2 (A=Ca,Eu,Yb)