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We conduct an experimental investigation of temperature dependence of spindiffusion length in highly-doped n-type silicon by using a non-local 3-terminalmethod. Whereas an effect of spin drift is not ignorable to bias- andtemperature-dependence of spin signals in non-metallic systems except for thecase of a non-local 4-terminal method, it is not fully conclusive how the spindrift affects spin transport properties in highly-doped Si in a non-local3-terminal method that is often used in Si spintronics. Here, we report ontemperature dependence of spin diffusion length in the Si, and it is clarifiedthat the spin transport is less affected by an external electric field.

Observation of weak temperature dependence of spin diffusion length in highly-doped Si by using a non-local 3-terminal method