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Photoluminescence and optically detected magnetic resonance techniques are utilized to study defect properties of GaNP and GaNAs alloys subjected to post-growth hydrogénation by low-energy sub-threshold ion beam irradiation. It is found that in GaNP H incorporation leads to activation of new defects, which has a Ga interstitial atom at its core and may also involve a H atom as a partner. The observed activation critically depends on the presence of N in the alloy, as it does not occur in GaP with a low level of N doping. In sharp contrast, in GaNAs hydrogen is found to efficiently passivate Ga i-related defects present in the as-grown material. A possible mechanism responsible ror the observed difference in the H behavior in GaNP ana GaNAs is discussed. © 2012 American Institute of Physics

Effects of hydrogenation on non-radiative defects in GaNP and GaNAs alloys: An optically detected magnetic resonance study